AP9575GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
TO-220CFM(I)
-60V
70mΩ
-16A
Description
The Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-16
-10
-60
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
200515071-1/4
AP9575GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
14
-
-
-
21
5
11
10
18
24
42
160
130
5
Max. Units
-
70
90
-3
-
-10
-25
±100
34
-
-
-
-
-
-
-
-
8
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-10A
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
GS
= ±20V
I
D
=-10A
V
DS
=-50V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-10A
R
G
=3.3Ω,V
GS
=-10V
R
D
=3Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1760 2800
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-10A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
46
100
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
AP9575GI
50
50
T
C
= 25 C
40
o
-10V
- 7 .0V
-5.0V
-4.5V
-I
D
, Drain Current (A)
T
C
=150
o
C
40
-10V
-7.0V
-5.0V
-4.5V
-I
D
, Drain Current (A)
30
30
20
20
V
G
= -3.0V
10
V
G
= -3.0 V
10
0
0
4
8
12
0
0
4
8
12
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
2.0
I
D
= -8 A
T
C
=25
℃
1.6
90
I
D
= - 10 A
V
G
= -10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
70
0.8
50
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
1.2
8
Normalized -V
GS(th)
(V)
1.0
-I
S
(A)
6
T
j
=150
o
C
4
T
j
=25
o
C
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9575GI
f=1.0MHz
12
10000
-V
GS
, Gate to Source Voltage (V)
V
DS
= - 50 V
I
D
= - 10 A
9
1000
C
iss
6
C (pF)
100
C
oss
C
rss
3
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
10
0.2
-I
D
(A)
1ms
10ms
100ms
o
0.1
0.1
0.05
P
DM
1
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
c
=25 C
Single Pulse
0
0.1
1
10
1s
DC
0.01
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
= -5V
-I
D
, Drain Current (A)
T
j
=25
o
C
T
j
=150
o
C
V
G
Q
G
20
-4.5V
Q
GS
Q
GD
10
Charge
0
0
2
4
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
安防电子
